JST高品质中小电压MOS低压MOS SI2302规格
20V N-Channel Enhancement Mode MOSFET
VDS= 20V
RDS(ON), Vgs@ 4.5V, Ids@3A＜45m Ω
RDS(ON), Vgs@ 2.5V, Ids@ 2.5A ＜59m Ω
SI2302 Features
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
Package Dimensions
Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted)
Notes
Pulse width limited by maximum junction temperature.
Surface Mounted on FR4 Board, t ? 5 sec.
Surface Mounted on FR4 Board.
